FFP30S60STU【PDF 1/6 页】DIODE STEALTHII 600V 30A TO220-2

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November 2013

FFP30S60S

— STEALTH? II Diode

?2007 Fairchild Semiconductor Corporation

FFP30S60S Rev.C1

www.fairchildsemi.com

FFP30S60S

30 A, 600 V STEALTHTM

II Diode

Features

? Stealth Recovery trr = 40 ns (@ IF = 30 A)

? Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)

? 600 V Reverse Voltage and High Reliability

? Avalanche Energy Rated

? RoHS Compliant

Applications

? General Purpose

? SMPS, Power Switching Circuits

? Boost Diode in Continuous Mode Power Factor Corrections

Description

The FFP30S60S is a STEALTH? II diode with soft recovery

characteristics. It is silicon nitride passivated ion-implanted epi-

taxial planar construction.

This device is intended for use as freewheeling of boost diode in

switching power supplies and other power swithching applica-

tions. Their low stored charge and hyperfast soft recovery mini-

mize ringing and electrical noise in many power switching circuits

reducing power loss in the switching transistors.

Absolute Maximum Ratings

TC = 25oC unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Rating Unit

VRRM

Peak Repetitive Reverse Voltage 600 V

VRWM

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

IF(AV)

Average Rectified Forward Current @ TC

= 103

oC 30 A

IFSM

Non-repetitive Peak Surge Current

60Hz Single Half-Sine Wave

300 A

TJ, TSTG

Operating and Storage Temperature Range -65 to +150

Symbol Parameter Max. Unit

R?JC

Maximum Thermal Resistance, Junction to Case 1.1

oC/W

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FFP30S60STU FFP30S60S TO-220-2L Tube N/A N/A

1. Cathode 2. Anode

TO-220-2L

Pin Assigments

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